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RF Power Field Effect Transistor LDMOS, 1890 -- 1925 MHz, 30W, 26V
10/31/03
Preliminary
MAPLST1900-030CF
Features
Designed for PHS applications in the 1890-1925 MHz frequency band. Typical performance in PHS mode at -68 dBc ACPR (600kHz): Average Output Power: 8W Gain: 13dB (typ.) Efficiency: 26% (typ.) 10:1 VSWR Ruggedness at 8W, 26V, 1890MHz)
Package Style
MAPLST1900-030CF
Maximum Ratings
Parameter Drain--Source Voltage Gate--Source Voltage Total Power Dissipation @ TC = 25 C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 97 -40 to +150 +200 Units Vdc Vdc W C C
Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.8 Unit C/W
NOTE--CAUTION--MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed.
RF Power LDMOS Transistor, 1890 -- 1925 MHz, 30W, 26V
MAPLST1900-030CF
10/31/03
Preliminary
Characteristic DC CHARACTERISTICS @ 25C Characteristic Drain-Source Breakdown Voltage OFF(VGS = 0 Vdc, ID = 20 Adc) CHARACTERISTICS Zero Gate Voltage Drain Leakage Current 26 (VDS = 65 Vdc, VGS = 0) DS GS Gate--Source Leakage Leakage Zero Gate Voltage DrainCurrent Current (VGS = 5 Vdc, V (VDS = 26Vdc, VDS ==0) 0) GS Gate Threshold Voltage Gate--Source Leakage Current (VDS = 10 Vdc, ID = 1 mA) (VGS = 5 Vdc, VDS = 0) Gate Quiescent Voltage ON CHARACTERISTICS mA) (VDS = 26 Vdc, ID = 250 Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25C Input Capacitance (Including Input Matching DYNAMIC CHARACTERISTICS (1) Capacitor in Package) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer TESTS (In FUNCTIONAL Capacitance M/A-COM Test Fixture) (2) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture) PHS Gain (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1920 MHz) PHS Drain Efficiency (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1920 MHz) PHS ACPR @ 600 kHz offset (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1905 MHz) PHS ACPR @ 900 kHz offset (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1905 MHz) PHS Gain (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1890 MHz) PHS Drain Efficiency (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1890 MHz) Input Return Loss (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1920 MHz) Output VSWR Tolerance (VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.), IDQ = 250 mA, f0 = 1890 MHz) Gps -- 13.0 -- dB Ciss Coss Crss -- -- 90 32.5 -- -- pF pF Symbol Symbol V(BR)DSS IDSS IDSS IGSS IDSS VGS(th) IGSS VDS(Q) VDS(on) Gm Min Min 65 -- -- -- -- -- 2 2 -- -- Typ Typ -- -- -- -- -- -- -- -- 0.2 1.2 Max Max -- 101 11 1 4 Unit Unit Vdc Adc Adc Adc Adc Vdc Adc Vdc Vdc S
4.5 -- --
--
1.5
--
pF
EFF ()
--
26
--
%
ACPR
--
-68
--
dBc
ACPR
--
-78
--
dBc
Gps
--
13.0
--
dB
EFF ()
--
26
--
%
IRL
--
-12
-9
dB
No Degradation In Output Power Before and After Test
2
RF Power LDMOS Transistor, 1890 -- 1925 MHz, 30W, 26V
MAPLST1900-030CF
10/31/03
Preliminary
C1,C7 Electrolytic Surface Mt. Cap., 100 F, 35 V C2,C8 Ceramic Chip Capacitor, 0.1 F C3,C9 Ceramic Chip Capacitor, 1000 pF C4,C5,C10,C11 Chip Capacitor, 8.2 pF ATC100B C6 Chip Capacitor, 0.5 pF ATC100B C12 Chip Capacitor, 1.2 pF ATC100B J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 8 nH, CoilCraft A03T L2,L3 Inductor, 18.5 nH, CoilCraft A05T P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPLST1900-030CF R1 Chip Resistor (0805), 100k Ohm R2 Chip Resistor (0805), 10K Ohm
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10
Distributed Microstrip Element, 0.851" x 0.082" Distributed Microstrip Element, 0.105" x 0.082" Distributed Microstrip Element, 0.515" x 0.082" Distributed Microstrip Element, 0.370" x 0.160" Distributed Microstrip Element, 0.460" x 0.300" Distributed Microstrip Element, 0.226" x 0.660" Distributed Microstrip Element, 0.425" x 0.380" Distributed Microstrip Element, 0.792" x 0.082" Distributed Microstrip Element, 0.283" x 0.082" Distributed Microstrip Element, 0.565" x 0.082"
PC Board (74350132-01), Arlon Woven Glass Teflon .030" Thick, Er=2.54, 2 Oz Copper Both Sides
Figure 1. 1890--1925 MHz Test Fixture Schematic
Figure 2. 1890--1925 MHz Test Fixture Component Layout
3
RF Power LDMOS Transistor, 1890 -- 1925 MHz, 30W, 26V
MAPLST1900-030CF
10/31/03
Preliminary
13.50 13.25 13.00 12.75 12.50
Gain (dB)
40 35 30
Efficiency (%)
25 20 15 10 5 0 30 31 32 33 34 35 36 37 38 39 40 41 42 43
POUT(dBm) avg.
12.25 12.00 11.75 11.50 11.25 11.00 10.75
f
Gain (1899MHz) Gain (1905MHz) Eff (1899MHz) Eff (1905MHz)
Graph 1. PHS: Power Gain and Drain Efficiency vs. Output Power
POUT(dBm) avg.
30 -55
ACPR (600kHz Offset) @ 1905MHz Pi/4 DQPSK,192 kHz, 26VDC, 250mA
31
32
33
34
35
36
37
38
39
40
41
42
43
-60
ACPR Lower (1905MHz) ACPR Upper (1905MHz)
Gain(dB)
-65
-70
-75
-80
Graph 2. PHS: Adjacent Channel Power Ratio vs. Output Power
4
RF Power LDMOS Transistor, 1890 -- 1925 MHz, 30W, 26V
MAPLST1900-030CF
10/31/03
Preliminary
Package Dimensions
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information.
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